英特尔院士报告
听亲手实践摩尔定律的人讲述英特尔技术内幕！
与清华学长、英特尔院士面对面！
时间：2007年11月5日星期一
地点：微电子所大楼308室
（现场备有精美礼品）
Abstract:
Moore's law has been the guiding principal for semiconductor industry over last 40 years. The relentless technology scaling has reduced the feature size of transistor well blow 50nm regime in today's CMOS technology and the scaling has led to an unprecedented level of integration in VLSI system design in achieving ever higher performance and lower power consumption. As the physical dimensions of transistors are scaled down to nano-scale, there are many new challenges facing the industry. This talk will first discuss the key challenges facing today's technology scaling, including transistor performance, leakage management, and process variations. Some innovative technology solutions such as strained Si will be used to illustrate how to address the technology challenges. The presentation will also discuss how to explore the process-design co-optimization in overcoming these difficulties. Real design optimization examples from large on-die cache memory will be presented on how to mitigate the scaling challenges and achieve optimal product design goals.
Speaker’s Bio:
Dr. Kevin X. Zhang
Intel Fellow, Technology and Manufacturing Group
Director, Advanced Memory Circuits and Technology Integration
INTEL CORPORATION
Kevin Zhang is with logic technology development, where he is responsible for embedded memory technology development at Intel. Zhang is also responsible for developing high-speed and low-power circuits in embedded memory for future microprocessor and communication products. He has led the design and validation of technology vehicles from 90nm to 45nm technology generations.
After joining Intel in 1997, Zhang worked on low-power technology for mobile CPUs and became a Principal Engineer in 2000 for his contributions in that area.
Zhang holds 32 U.S. patents and has published 27 technical papers in the field of semiconductor technology and integrated circuits. He is a recipient of Intel Achievement Award in 2004 for his contribution to the development of 65nm SRAMs. Zhang currently is a member of Technical Program Committee of the International Solid-State Circuits Conference (ISSCC).
Zhang received his B.S. degree from Tsinghua University in Beijing in 1987 and his Ph.D. from Duke University in 1994, both in electrical engineering.
